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J anuary 200 9
FDB3672_F085
N-Channel PowerTrench ? MOSFET
100V, 44A, 28m ?
Features
? r DS(ON) = 24m ? (Typ.), V GS = 10V, I D = 44A
? Q g (tot) = 24nC (Typ.), V GS = 10V
? Low Miller Charge
? Low Q RR Body Diode
? Optimized efficiency at high frequencies
? UIS Capability (Single Pulse and Repetitive Pulse)
? Qualified to AEC Q101
? RoHS Compliant
Formerly developmental type 82760
DRAIN
(FLANGE)
GATE
SOURCE
TO-263AB
FDB SERIES
Applications
? DC/DC converters and Off-Line UPS
? Distributed Power Architectures and VRMs
? Primary Switch for 24V and 48V Systems
? High Voltage Synchronous Rectifier
? Direct Injection / Diesel Injection Systems
? 42V Automotive Load Control
? Electronic Valve Train Systems
D
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
100
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V)
44
A
I D
E AS
P D
Continuous (T C = 100 o C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, R θ JA = 43 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
31
7.2
Figure 4
120
120
0.8
A
A
A
mJ
W
W/ o C
T J , T STG
Operating and Storage Temperature
-55 to 175
o
C
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case TO-263
1.25
o
C/W
R θ JA
Thermal Resistance Junction to Ambient TO-263 (Note 2)
62
o C/W
R θ JA
Thermal Resistance Junction to Ambient TO-263, 1in 2 copper pad area
43
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2009 Fairchild Semiconductor Corporation
FDB3672_F085 Rev. A
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